The new technology in two-dimensional nano semiconductor has just been developed. It surprisingly raises the response factor of light in the semiconductor and upgrades the performance as a result.

The research group conducted by Prof. Jin hong Park at SUNGKYUNKWAN UNIVERSITY announced on May 26th that his team has created the new technology of response factor of light in two-dimensional nano semiconductor by utilizing the technology of n-type doping and arranging different materials in vertical.

Two-dimensional nano semiconductor is known as thin as paper and for the electronical, mechanical and optical characteristic. The invention of the product is remarkable in the market due to its applicability on the flexible and transparent material of electronic equipment such as a smart phone, tablet computer and smart watch.

In usual circumstance, two-dimensional semiconductor implies only one of two features, n-type with a lot of electron or p-type with a lot of holes, which cause a few of difficulties for using. This is why the team employed the doping technology in which triphenylphosphine is thinly laminated on the surface of WSe2. In result, they developed n-type photodetector making use of n-type doping technology. The development precedes all related studies, proving its superiority in the aspect of response factor of light than that of p-type photodetector.

The research team also dramatically raised the response factor of light by piling up two-dimensional nano semiconductor in vertical on two-dimensional electric insulation material called h-BN. It is formally stated that the outcome is 25 times higher than that of the element of photodetector based on MoS2. The response factor of light can be found from very slight light intensity, the team added.

Moreover, the outcome shows that the response factor of light of the invented photodetector is five times higher than that of preceding p-type WSe2 that is inapplicable with the doping technology as well as a million times better than the photodetector based on silicon and gallium arsenide that are the main materials for making semiconductor.
Prof. Park said, “We anticipate upgrading the characteristic of response factor of light further so that it can dedicate to the development of photoelectric element and of optical measurement sensor industry.

The research was sponsored by Korean Ministry of Science and posted on “Advanced Materials” on April 23rd, which is an international scientific magazine about nano material studies.