The modern smart-phone and tablet PC require built-in semiconductors consuming very low power. Here, extremely low power consumption is enabled by using ultrathin 2-dimensional materials.
On March 24 SungKyunKwan University(SKKU)’s professor Yoo Won-jong of Department of Nano Science and Technology announced that they have developed the world’s thinnest semiconductor by successfully inventing a three nanometer ultrathin semiconductor.
The reseerch team used molybdenum disulfide (MoS2) as their primary material. Molybdenum disulfide is a very thin new generation 2D material which flows current fluently at very low voltage. While graphene is unable to function well for digital electronic application, molybdenum disulfide is a material capable of independent digital functioning.
“By using the ultrathin semiconductor, we will be able to realize electronic devices that use much smaller energy, compared to the conventional semiconductors” Prof. Yoo asserts. ”The developed technique will be used very importantly in the future ubiquitous and mobile living environment”
The research was published in the Nature Communications March 24 issue.
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