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Development of Hafnium Oxide-Based Next-Generation Memory Devices for AI Hardware
Development of Hafnium Oxide-Based Next-Generation Memory Devices for AI Hardware

Research Stories

Hafnium Oxide-Based Next-Generation
Memory for AI Hardware

Mechanical Engineering
Prof.Kim, Taesung

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From the Screen to the Lecture Room
From the Screen to the Lecture Room

SKKU People

From the Screen to the Lecture Room
'Black Panther' 'inZOI'

Film, Television and Multimedia
Prof. Youngho Kim

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News

SKKU Research Team Unravels the Origin of Stochasticity

A joint research team led by Professor Jung Ho Yoon from the School of Advanced Materials Science and Engineering has reported for the first time that the resistive switching behavior of ion-motion-mediated volatile memristors, which are emerging as promising next-generation semiconductor devices, originates from a combined mechanism comprising multiple conductive filaments coupled with electrothermal effects.

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Research Stories

  • Development of Hafnium Oxide-Based Next-Generation Memory Devices for AI Hardware Mechanical Engineering
    Prof. KIM, TAESUNG

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    김태성교수연구
  • [Past Contents]

    Discovering the ‘Brain Fingerprints’ of Chronic Pain Biomedical Engineering
    Prof. WOO, CHOONG-WAN

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    우충완 교수 연구

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