A new memory device inspired by the neuron connections of the human brain have been designed. The research, published in Nature Communications, highlights the device’s highly reliable performance, long retention time, and endurance. Moreover, its stretchability and flexibility make it a promising tool for the next-generation soft electronics attached to clothes or the body. The brain is able to learn and memorize things to a huge number of connections between neurons. The information that a human memorizes is transmitted through synapses from one neuron to the next as an electro-chemical signal. Inspired by these connections, IBS scientists constructed a memory called two-terminal tunnelling random access memory (TRAM), where two electrodes referred to as drain and source, resemble the two communicating neurons of the synapse. TRAM is made up of a stack of one-atom-thick, or a few atom-thick 2D crystal layers: the semiconductor molybdenum disulfide (MoS 2 ) with two electrodes (drain and source), an tunneling insulator of hexagonal boron nitride (h-BN), and a floating gate of graphene layer. In simple terms, memory creates program (logical-0) and erases (logical-1) state by the charging and discharging the graphene floating gate through the h-BN tunneling barrier. By effective charge tunneling through crystalline h-BN layer and storing charges in graphene layer, TRAM demonstrates an ultimately low off-state current of 10 -14 A, leading to ultra high on/off ratio over 10 9 about ~10 3 times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics. This memory device could be useful for the next-generation nueromorphic systems, wearable, and body-attachable electronics in the near future.