성균관대학교

성균관대학교

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[General] [CICE] Dr. Shin Byeong Ha, IBM T. J. Watson Research Institute 최종 수정일 : 2012.12.04
  • PARK, JIN HONG
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<p class="바탕글"><span lang="EN-US" style="FONT-FAMILY: 맑은 고딕; FONT-SIZE: 11pt; mso-fareast-font-family: 맑은 고딕; mso-hansi-font-family: 맑은 고딕">1. Speaker: Dr. Shin Byeong Ha,&nbsp; IBM T. J. Watson Research Institute</span></p>
<p class="바탕글"><span lang="EN-US" style="FONT-FAMILY: 맑은 고딕; FONT-SIZE: 11pt; mso-fareast-font-family: 맑은 고딕; mso-hansi-font-family: 맑은 고딕">2. Time:11:00-12:00,&nbsp; Wed, November 28, 2012</span></p><span lang="EN-US" style="FONT-FAMILY: 맑은 고딕; FONT-SIZE: 11pt; mso-fareast-font-family: 맑은 고딕; mso-hansi-font-family: 맑은 고딕"><p class="바탕글">3. Venue: Engineering Building I 23242</p>
<p class="바탕글">4. Title: Thin Film Solar Cells with Earth-Abundant Cu2ZnSn(SXSe1-X)4 Absorbers Prepared by Thermal Co-evaporation</p>
<p class="바탕글">5. Summary: The currently leading thin film photovoltaic technologies, Cu(In,Ga)Se2 and CdTe suffer from scarcity and/or toxicity of the constituent elements. To overcome these issues, researchers have begun to look for a non-toxic and earth-abundant alternative such as Cu2ZnSn(S, Se)4 (CZTSSe). CZTSSe has suitable optical properties for photovoltaic applications and we have employed thermal co-evaporation and a brief post-deposition annealing under chalcogen (S or Se) vapor to prepare CZTSSe films. Completing the device structure with a Mo back contact, CdS buffer layer, ZnO transparent conducting oxide, and Ni/Al fingers, we have achieved a power conversion efficiency of 8.4% from pure sulfide CZTS solar cells (bandgap ~1.45 eV)?which is the record efficiency for pure sulfide CZTS fabricated by any method?and 8.9% from pure selenide CZTSe solar cells (bandgap ~1.0 eV). I will present our extensive structural, optical, electrical analysis of these high efficiency CZTSSe based solar cells.</p>
<p class="바탕글">6. Speaker's CV : Byungha Shin received his bachelor’s degree, master’s degree, and Ph.D. degree from Seoul National University at 2000, University of Michigan at 2002, and Harvard University at 2007, respectively. After his post-doctoral fellowship at Stanford from 2007 to 2010, he then joined IBM TJ Watson Research Center. His past research experience includes atomic-scale study of III-V heterostructures with cross-sectional scanning tunneling microscopy, thin film growth kinetics of MBE and PLD, and high-k metal oxides. At IBM, he has been working on thin film solar cells based on an earth-abundant absorber such as Cu2ZnSn(S,Se)4.</p>
<p class="바탕글">7. Contact: Next-Generation Nano Semiconductor Devices Laboratory (Professor Jinhong Park) 031-299-4951</p></span>
<p class="바탕글"><span lang="EN-US" style="FONT-FAMILY: 맑은 고딕; FONT-SIZE: 11pt; mso-fareast-font-family: 맑은 고딕; mso-hansi-font-family: 맑은 고딕" /></p>
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